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  8 amplifiers - smt 8 - 366 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478MP86 sige hbt gain block mmic amplifier, dc - 4.0 ghz v00.1004 general description functional diagram the HMC478MP86 is a sige heterojunction bipolar transistor (hbt) gain block mmic smt ampli er covering dc to 4 ghz. this micro-p packaged ampli er can be used as a cascadable 50 ohm rf/if gain stage as well as a lo or pa driver with up to +20 dbm output power. the HMC478MP86 offers 22 db of gain with a +32 dbm output ip3 at 850 mhz while requiring only 62 ma from a single positive supply. the darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +18 dbm gain: 22 db output ip3: +32 dbm cascadable 50 ohm i/os single supply: +5v to +8v robust 1,000v esd, class 1c typical applications the HMC478MP86 is an ideal rf/if gain block & lo or pa driver: ?cellular / pcs / 3g ?fixed wireless & wlan ?catv, cable modem & dbs ?microwave radio & test equipment electrical speci cations, vs= 5.0 v, rbias= 18 ohm, t a = +25?c note: data taken with broadband bias tee on device output. parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 19 15 13 11 22 18 16 14 db db db db gain variation over temperature dc - 4.0 ghz 0.015 0.02 db/ ? input return loss dc - 1.0 ghz 1.0 - 3.0 ghz 3.0 - 4.0 ghz 15 12 13 db db db output return loss dc - 1.0 ghz 1.0 - 4.0 ghz 20 17 db db reverse isolation dc - 4.0 ghz 20 db output power for 1 db compression (p1db) 0.5 - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 15 13 11 9 18 16 14 12 dbm dbm dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) 0.5 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 32 29 25 dbm dbm dbm features
8 amplifiers - smt 8 - 367 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478MP86 output return loss vs. temperature v00.1004 broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature sige hbt gain block mmic amplifier, dc - 4.0 ghz noise figure vs. temperature -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 012345678 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 012345 +25 c +85 c -40 c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345 +25 c +85 c -40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345 +25 c +85 c -40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345 +25 c +85 c -40 c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 012345 +25 c +85 c -40 c noise figure (db) frequency (ghz)
8 amplifiers - smt 8 - 368 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478MP86 v00.1004 sige hbt gain block mmic amplifier, dc - 4.0 ghz gain, power & oip3 vs. supply voltage for constant icc= 62 ma @ 850 mhz p1db vs. temperature psat vs. temperature output ip3 vs. temperature vcc vs. icc over temperature for fixed vs= 5v, r bias = 18 ohms 0 2 4 6 8 10 12 14 16 18 20 22 24 012345 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 012345 +25c +85c -40c psat (dbm) frequency (ghz) 10 15 20 25 30 35 012345 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) 40 45 50 55 60 65 70 75 80 3.7 3.8 3.9 4 4.1 4.2 4.3 icc (ma) vcc (vdc) +85 c +25 c -40 c 0 4 8 12 16 20 24 28 32 36 5678 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc) gain, p oip3 s. s vta rs 18 oms 850 hz 0 4 8 12 16 20 24 28 32 36 4.5 5 5.5 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc)
8 amplifiers - smt 8 - 369 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478MP86 v00.1004 sige hbt gain block mmic amplifier, dc - 4.0 ghz outline drawing absolute maximum ratings collector bias voltage (vcc) +6.0 vdc collector bias current (icc) 100 ma rf input power (rfin)(vcc = +4.3 vdc) +5 dbm junction temperature 150 ? continuous pdiss (t = 85 c) (derate 9 mw/c above 85 c) 0.583 w thermal resistance (junction to lead) 111. 5 c / w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1c %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. leadframe material: copper alloy 3. leadframe plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. all ground leads must be soldered to pcb rf ground. 7. the micro-p package is dimensionally compatable with the micro-x package 8. classified as moisture sensitivity level (msl) 1.
8 amplifiers - smt 8 - 370 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478MP86 v00.1004 sige hbt gain block mmic amplifier, dc - 4.0 ghz application circuit pin descriptions pin number function description interface schematic 1 rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 3 rfout rf output and dc bias (vcc) for the output stage. 2, 4 gnd these pins must be connected to rf/dc ground. recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh c1, c2 0.01 ? 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 62 ma, rbias= (vs - vcc) / icc supply voltage (vs) 5v 6v 8v r bias v alue 18 ? 35 ? 67 ? r bias p ower r ating 1/8 w 1/4 w 1/2 w
8 amplifiers - smt 8 - 371 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478MP86 v00.0603 sige hbt gain block mmic amplifier, dc - 4.0 ghz evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 110170* item description j1 - j2 pc mount sma connector j3 - j4 dc pin c1, c2 capacitor, 0402 pkg. c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 ? capacitor, tantalum r1 resistor, 1210 pkg. l1 inductor, 0603 pkg. u1 HMC478MP86 pcb** 107087 evaluation pcb ** circuit board material: rogers 4350 * reference this number when ordering complete evaluation pcb.


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